Samsung Electronics Co has announced that it has completed the first working prototype of what is expected to be the fast performance memory device of the future.
(Probably stemming from Samsung licensing PRAM technology from Ovonyx)

Replacing high density NOR flash within the next decade will be PRAM, a Phase-change Random Access Memory. (read up on it here: http://en.wikipedia.org/wiki/Phase-change_RAM). Information was unveiled at an annual press conference in Seoul, Korea, earlier today.

Said to be 30 times faster than today’s NOR flash memory; PRAM can rewrite data without having to first erase data previously accumulated; giving it the nickname: perfect RAM.
PRAM is also expected to have at least 10-times the life span of flash memory-
And requires 20 percent fewer process steps to produce than those used in the manufacturing of NOR flash memory.

The new PRAM has the smallest 0.0467um 2 cell size of any working memory that is free of inter-cell noise, allowing virtually unlimited scalability.

Available beginning sometime in 2008; high-density versions will be produced first, starting with 512 Mb.

Via Samsung