Nikon NSR-S610C to be Used for Production of 43 nm NAND Flash

Nikon Corporation and Toshiba Corporation has just announced that the 43 nm NAND Flash production would begin using the Nikon NSR-S610C ArF immersion scanner, during the 4th International Symposium on Immersion Lithography held in Keystone, Colorado last week. The NSR-S610C (NA = 1.30), the world’s first 45 nm-capable immersion scanner, is targeted for mass production of 45 nm or smaller memory and 32 nm logic devices.

Starting with the NSR-S609B, the world’s first production immersion tool that started shipping in January of 2006, Nikon has consistently been first to market with immersion scanners for production. The NSR-610C began shipping in February of 2007 and was the first scanner capable of printing 45 nm half pitch patterns with sufficient process windows for volume production.

The system uses proprietary Nikon Local Fill Technology, which is proven to eliminate scanner-induced immersion defects with no bubbles, water spots, or backside wafer contamination. This technology also eliminates evaporation of the immersion fluid, providing a critical advantage in preventing immersion related overlay problems. The S610C also incorporates the Nikon Tandem Stage design, which uses two stages with different functions to increase throughput, improve accuracy, and enhance long-term stability.